Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

Shin Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.

Original languageEnglish
Pages (from-to)293-299
Number of pages7
JournalECS Transactions
Issue number3
Publication statusPublished - 2007
EventAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

ASJC Scopus subject areas

  • Engineering(all)

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