Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

Shin Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.

Original languageEnglish
Title of host publicationECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7
PublisherElectrochemical Society Inc.
Pages293-299
Number of pages7
Edition3
ISBN (Electronic)9781566775694
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number3
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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