Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

Shin Ichiro Kuroki; Masayuki Toda; Masaru Umeda; Koji Kotani; Takashi Ito

doi:10.1149/1.2778672

Permittivity enhancement of mechanically strained SrTiO₃ MIM capacitor

Shin Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The possibility of strain engineering on SrTiO₃ high-k insulator was discussed. The tensile strain on SrTiO₃ thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO₃ film, and titanium-oxygen dipole moment was increased.

Original language	English
Title of host publication	ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7
Publisher	Electrochemical Society Inc.
Pages	293-299
Number of pages	7
Edition	3
ISBN (Electronic)	9781566775694
DOIs	https://doi.org/10.1149/1.2778672
Publication status	Published - 2007
Externally published	Yes
Event	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

Publication series

Name	ECS Transactions
Number	3
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	07/10/7 → 07/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2778672

Cite this

Kuroki, S. I., Toda, M., Umeda, M., Kotani, K., & Ito, T. (2007). Permittivity enhancement of mechanically strained SrTiO₃ MIM capacitor. In ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 (3 ed., pp. 293-299). (ECS Transactions; Vol. 11, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.2778672

Permittivity enhancement of mechanically strained SrTiO₃ MIM capacitor. / Kuroki, Shin Ichiro; Toda, Masayuki; Umeda, Masaru; Kotani, Koji; Ito, Takashi.

ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7. 3. ed. Electrochemical Society Inc., 2007. p. 293-299 (ECS Transactions; Vol. 11, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuroki, SI, Toda, M, Umeda, M, Kotani, K & Ito, T 2007, Permittivity enhancement of mechanically strained SrTiO₃ MIM capacitor. in ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7. 3 edn, ECS Transactions, no. 3, vol. 11, Electrochemical Society Inc., pp. 293-299, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting, Washington, DC, United States, 07/10/7. https://doi.org/10.1149/1.2778672

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abstract = "The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.",

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