Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

Shin Ichiro Kuroki; Masayuki Toda; Masaru Umeda; Koji Kotani; Takashi Ito

doi:10.1149/1.2778672

Permittivity enhancement of mechanically strained SrTiO₃ MIM capacitor

Shin Ichiro Kuroki, Masayuki Toda, Masaru Umeda, Koji Kotani, Takashi Ito

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

The possibility of strain engineering on SrTiO₃ high-k insulator was discussed. The tensile strain on SrTiO₃ thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO₃ film, and titanium-oxygen dipole moment was increased.

Original language	English
Pages (from-to)	293-299
Number of pages	7
Journal	ECS Transactions
Volume	11
Issue number	3
DOIs	https://doi.org/10.1149/1.2778672
Publication status	Published - 2007
Event	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

ASJC Scopus subject areas

Engineering(all)

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abstract = "The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.",

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T1 - Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor

AU - Kuroki, Shin Ichiro

AU - Toda, Masayuki

AU - Umeda, Masaru

AU - Kotani, Koji

AU - Ito, Takashi

PY - 2007

Y1 - 2007

N2 - The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.

AB - The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.

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T2 - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting

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