@inproceedings{a47b2e4ec57a4a658db2602fa20d0c28,
title = "Permittivity enhancement of mechanically strained SrTiO3 MIM capacitor",
abstract = "The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titanium-oxygen oscillator in SrTiO3 film, and titanium-oxygen dipole moment was increased.",
author = "Kuroki, {Shin Ichiro} and Masayuki Toda and Masaru Umeda and Koji Kotani and Takashi Ito",
year = "2007",
doi = "10.1149/1.2778672",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "293--299",
booktitle = "ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7",
edition = "3",
note = "Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}