Abstract
Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 33 |
| Issue number | 5 A |
| Publication status | Published - 1994 May 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Ohishi, K., & Hattori, T. (1994). Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation. Japanese Journal of Applied Physics, Part 2: Letters, 33(5 A).