Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation

Kazuaki Ohishi; Takeo Hattori

Periodic changes in SiO₂/Si(111) interface structures with progress of thermal oxidation

Kazuaki Ohishi, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

Abstract

Changes in SiO₂/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	33
Issue number	5 A
Publication status	Published - 1994 May 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation",

abstract = "Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.",

author = "Kazuaki Ohishi and Takeo Hattori",

year = "1994",

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AU - Hattori, Takeo

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N2 - Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

AB - Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

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ER -

Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation

Abstract

ASJC Scopus subject areas

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Periodic changes in SiO₂/Si(111) interface structures with progress of thermal oxidation