Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation

Kazuaki Ohishi, Takeo Hattori

    Research output: Contribution to journalArticle

    146 Citations (Scopus)

    Abstract

    Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800°C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800°C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume33
    Issue number5 A
    Publication statusPublished - 1994 May 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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