Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100)

Y. Teramoto, N. Watanabe, M. Fujimura, H. Nohira, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    The interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface state density near the midgap of Si decreases drastically at oxide film thickness where the surface roughness of oxide film takes its minimum value, while it does not decrease at oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities, the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

    Original languageEnglish
    Pages (from-to)67-71
    Number of pages5
    JournalApplied Surface Science
    Volume159
    DOIs
    Publication statusPublished - 2000 Jun

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

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