TY - JOUR
T1 - Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100)
AU - Teramoto, Y.
AU - Watanabe, N.
AU - Fujimura, M.
AU - Nohira, H.
AU - Hattori, T.
PY - 2000/6
Y1 - 2000/6
N2 - The interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface state density near the midgap of Si decreases drastically at oxide film thickness where the surface roughness of oxide film takes its minimum value, while it does not decrease at oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities, the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.
AB - The interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface state density near the midgap of Si decreases drastically at oxide film thickness where the surface roughness of oxide film takes its minimum value, while it does not decrease at oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities, the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.
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U2 - 10.1016/S0169-4332(00)00052-0
DO - 10.1016/S0169-4332(00)00052-0
M3 - Article
AN - SCOPUS:0034205946
VL - 159
SP - 67
EP - 71
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -