Performance prediction of graphene-channel field-effect transistors

Eiichi Sano, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects (SCEs) for graphene-channel field-effect transistors (GFETs) with wide Mayer armchair-graphene film with those for ultrathin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based device simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs.

Original languageEnglish
Article number011604
JournalJapanese journal of applied physics
Volume48
Issue number1
DOIs
Publication statusPublished - 2009 Jan 20

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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