TY - JOUR
T1 - Performance prediction of complementary field-effect transistor circuits using graphene with band gap induced by site-potential asymmetry
AU - Sano, Eiichi
AU - Otsuji, Taiichi
PY - 2011/11
Y1 - 2011/11
N2 - A drift-diffusion-based simulation and Monte Carlo simulation with electron-phonon and electron-electron scatterings are performed to extract the threshold voltage characteristics and intrinsic delay of field-effect transistors (FETs) composed of graphene with an energy band gap owing to atomic site potential asymmetry. On the basis of the deduced graphene FET characteristics, the delays of complementary graphene FET inverters are predicted for gate lengths down to 10 nm. The calculations suggest a sub-picosecond delay in 10nm gate inverters. The problem of fully using the high electron velocity in graphene is addressed.
AB - A drift-diffusion-based simulation and Monte Carlo simulation with electron-phonon and electron-electron scatterings are performed to extract the threshold voltage characteristics and intrinsic delay of field-effect transistors (FETs) composed of graphene with an energy band gap owing to atomic site potential asymmetry. On the basis of the deduced graphene FET characteristics, the delays of complementary graphene FET inverters are predicted for gate lengths down to 10 nm. The calculations suggest a sub-picosecond delay in 10nm gate inverters. The problem of fully using the high electron velocity in graphene is addressed.
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U2 - 10.1143/JJAP.50.115101
DO - 10.1143/JJAP.50.115101
M3 - Article
AN - SCOPUS:80755141465
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 PART 1
ER -