Abstract
We have developed a write-line-inserted magnetic tunneling junction (MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98 mA and its thermal stability factor was 85 for a 0.32×0.48 μ m2 MTJ. We evaluated the switching property of the WLIM in an external magnetic field (Hsw_ext) and an internal magnetic field (Hsw_int). We found that Hsw_ext was larger than Hsw_int when the aspect ratio of the MTJs was less than 1.5. Furthermore, we obtained a high write-current magnetic-field efficiency of 13.0 OemA when the aspect ratio of the MTJs was low. These properties mean that the WLIM structure has advantages for use in low-write-current MRAM.
Original language | English |
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Article number | 07A711 |
Journal | Journal of Applied Physics |
Volume | 103 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Apr 21 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)