Performance of silicon ballistic nanowire MOSFET with diverse orientations and diameters

A. Abudukelimu, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1111-1116
Number of pages6
Edition1
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: 2010 Mar 182010 Mar 19

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period10/3/1810/3/19

ASJC Scopus subject areas

  • Engineering(all)

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