Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin Ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Original languageEnglish
Pages (from-to)82-86
Number of pages5
JournalSolid-State Electronics
Volume102
DOIs
Publication statusPublished - 2014 Dec
Externally publishedYes

Keywords

  • Distributed-element circuit
  • Epitaxial growth
  • Parallel plate tunneling
  • Tunnel FET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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