Performance enhancement of tunnel field-effect transistors by synthetic electric field effect

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'Uchi, Yong Xun Liu, Meishoku Masahara, Hiroyuki Ota

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.

Original languageEnglish
Article number6819818
Pages (from-to)792-794
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2014 Jul
Externally publishedYes


  • FinFET
  • Tunnel FET (TFET)
  • drain current
  • epitaxial growth
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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