Performance enhancement of thin-film transistors by using high-purity semiconducting single-wall carbon nanotubes

Shunjiro Fujii, Takeshi Tanaka, Yasumitsu Miyata, Hiroshi Suga, Yasuhisa Naitoh, Takeo Minari, Tetsuhiko Miyadera, Kazuhito Tsukagoshi, Hiromichi Kataura

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) using a random network of semiconductor- enriched single-wall carbon nanotubes (SWCNTs) were fabricated on a SiO2/Si substrate. Semiconductor-enriched SWCNTs were extracted from a pristine sample by centrifugation using agarose gel. Prior to depositing the SWCNTs, the substrate surface was modified by self-assembly of a monolayer of aminosilanes to produce an ideal two-dimensional network structure. As a result, all the TFTs fabricated on the substrate had on/off current ratios higher than 104without electrical breakdown, while TFTs fabricated using pristine SWCNTs had a broad distribution of on/off ratios from 101to 104. This improvement in transfer characteristics demonstrates a major advantage of using semiconductor-enriched SWCNTs.

Original languageEnglish
Article number071601
JournalApplied Physics Express
Volume2
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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