TY - JOUR
T1 - Performance degradation of InGaP solar cells due to 70 keV electron irradiation
AU - Okuno, Yasuki
AU - Okuda, Shuichi
AU - Oka, Takashi
AU - Kawakita, Shirou
AU - Imaizumi, Mitsuru
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/8
Y1 - 2017/8
N2 - The performance of InGaP solar cells irradiated with electron beams at energies lower than the damage threshold is degraded. To investigate the irradiation effect, GaAs and InGaP solar cells are irradiated with 70 keV electron beams. Measurements of the electroluminescence and external quantum efficiency, in addition to the light current voltage measurement, are conducted. The results show that the performance of the InGaP solar cell, mainly open-circuit voltage, is degraded and affected by nonradiative recombination centers, while the performance of the GaAs solar cell is hardly degraded. The comparison of the experimental results with the prediction from the displacement damage dose model suggests that the nonionizing energy loss of electrons is the main factor for evaluating the degradation of the InGaP cell caused by electron beams in a relatively low energy range.
AB - The performance of InGaP solar cells irradiated with electron beams at energies lower than the damage threshold is degraded. To investigate the irradiation effect, GaAs and InGaP solar cells are irradiated with 70 keV electron beams. Measurements of the electroluminescence and external quantum efficiency, in addition to the light current voltage measurement, are conducted. The results show that the performance of the InGaP solar cell, mainly open-circuit voltage, is degraded and affected by nonradiative recombination centers, while the performance of the GaAs solar cell is hardly degraded. The comparison of the experimental results with the prediction from the displacement damage dose model suggests that the nonionizing energy loss of electrons is the main factor for evaluating the degradation of the InGaP cell caused by electron beams in a relatively low energy range.
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U2 - 10.7567/JJAP.56.081203
DO - 10.7567/JJAP.56.081203
M3 - Article
AN - SCOPUS:85026478689
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 081203
ER -