@inproceedings{f0c22015f36d4ca499eb1742ce3bcc9d,
title = "Performance boost using a new device structure design for SOI MOSFETs beyond 25nm node",
abstract = "In this study, we model the device performance in ultra short-channel inversion- and accumulation-mode SOI MOSFETs beyond the 25nm node. The performance is obviously improved in accumulation mode SOI MOSFETs while device downscaling. Furthermore, we reveal the device design guideline for the short-channel accumulation mode SOI MOSFETs.",
author = "W. Cheng and A. Teramoto and T. Ohmi",
year = "2007",
doi = "10.1149/1.2778392",
language = "English",
isbn = "9781566775724",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "349--355",
booktitle = "ECS Transactions - 5th International Symposium on ULSI Process Integration",
edition = "6",
note = "5th International Symposium on ULSI Process Integration - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}