Performance analysis of lateral p-n junction laser-transistor

V. Ryzhii, A. Satou, I. Khmyrova, T. Ikegami, K. Kubota, P. O. Vaccaro, J. M. Zanardi Ocampo, T. Aida

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We study the performance of a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.

Original languageEnglish
Pages (from-to)4459-4464
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number8
DOIs
Publication statusPublished - 2002 Oct 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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