Performance analysis of lateral p-n junction laser-transistor

V. Ryzhii; A. Satou; I. Khmyrova; T. Ikegami; K. Kubota; P. O. Vaccaro; J. M. Zanardi Ocampo; T. Aida

doi:10.1063/1.1507813

Performance analysis of lateral p-n junction laser-transistor

V. Ryzhii, A. Satou, I. Khmyrova, T. Ikegami, K. Kubota, P. O. Vaccaro, J. M. Zanardi Ocampo, T. Aida

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We study the performance of a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.

Original language	English
Pages (from-to)	4459-4464
Number of pages	6
Journal	Journal of Applied Physics
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.1507813
Publication status	Published - 2002 Oct 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1507813

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title = "Performance analysis of lateral p-n junction laser-transistor",

abstract = "We study the performance of a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.",

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AU - Ryzhii, V.

AU - Satou, A.

AU - Khmyrova, I.

AU - Ikegami, T.

AU - Kubota, K.

AU - Vaccaro, P. O.

AU - Zanardi Ocampo, J. M.

AU - Aida, T.

PY - 2002/10/15

Y1 - 2002/10/15

N2 - We study the performance of a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.

AB - We study the performance of a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. The incorporation of the gate contact provides an opportunity to control the threshold current and output optical power by the gate voltage. The application of negative gate voltages can lead to a substantial decrease in the threshold current. This is due to the confinement of the electrons injected into the p-type portion of the quantum well serving as the active region. Using the developed device model, we calculate the laser-transistor threshold and output characteristics. We also estimate the device cutoff modulation frequency associated with the gate recharging.

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Performance analysis of lateral p-n junction laser-transistor

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