A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.
|Number of pages||4|
|Publication status||Published - 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas