Perfect selective highly anisotropic, and high rate ECR plasma etching for N+ poly-Si and WSix/poly-Si

Seiji Samukawa

doi:10.7567/ssdm.1990.c-3-3

Perfect selective highly anisotropic, and high rate ECR plasma etching for N⁺ poly-Si and WSi_x/poly-Si

Research output: Contribution to conference › Paper › peer-review

Abstract

A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n⁺ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10^-4 Torr a high etching rate and an infinite etching selectivity to SiO₂ etching are realized by using Cl₂/O₂ and Cl₂ /O₂/SF₆ etching gas.

Original language	English
Pages	207-210
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.c-3-3
Publication status	Published - 1990
Externally published	Yes
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1990.c-3-3

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@conference{21ab4b2e16074b2ab19c039de4485953,

title = "Perfect selective highly anisotropic, and high rate ECR plasma etching for N+ poly-Si and WSix/poly-Si",

abstract = "A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.",

author = "Seiji Samukawa",

year = "1990",

doi = "10.7567/ssdm.1990.c-3-3",

language = "English",

pages = "207--210",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - CONF

T1 - Perfect selective highly anisotropic, and high rate ECR plasma etching for N+ poly-Si and WSix/poly-Si

AU - Samukawa, Seiji

PY - 1990

Y1 - 1990

N2 - A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.

AB - A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.

UR - http://www.scopus.com/inward/record.url?scp=0025543647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025543647&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1990.c-3-3

DO - 10.7567/ssdm.1990.c-3-3

M3 - Paper

AN - SCOPUS:0025543647

SP - 207

EP - 210

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -