Abstract
A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.
Original language | English |
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Pages | 207-210 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1990 |
Externally published | Yes |
Event | 22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24 |
Other
Other | 22nd International Conference on Solid State Devices and Materials |
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City | Sendai, Jpn |
Period | 90/8/22 → 90/8/24 |
ASJC Scopus subject areas
- Engineering(all)