Perfect selective highly anisotropic, and high rate ECR plasma etching for N+ poly-Si and WSix/poly-Si

Research output: Contribution to conferencePaperpeer-review

Abstract

A new ECR plasma etching technology has been developed to realize simultaneously highly selective, high rate, and anisotropic etching for n+ poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located at the ECR position in a ECR plasma. As a result of the ECR position etching, under the low pressure of 5 × 10-4 Torr a high etching rate and an infinite etching selectivity to SiO2 etching are realized by using Cl2/O2 and Cl2 /O2/SF6 etching gas.

Original languageEnglish
Pages207-210
Number of pages4
DOIs
Publication statusPublished - 1990
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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