Penicillin Sensors Based on an Ion-Sensitive Field Effect Transistor Coated with Stearic Acid Langmuir-Blodgett Membrane

Jun Ichi Anzai, Jun Ya Hashimoto, Tetsuo Osa, Tadayuki Matsuo

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

The gate surface of an ion-sensitive field effect transistor (ISFET) was covered with a penicillinase-adsorbed Langmuir-Blodgett (LB) membrane in order to examine the potentiometric response to H+ ion and penicillin G. The LB membrane-modified ISFET exhibited pH response of —30 —40 mV/pH, whereas near-Nernstian response was obserbed for the ISFET without LB membrane. The ISFET penicillin sensor showed the potentiometric response to penicillin G at milimolar level in 5 mM phosphate buffer. The penicillin sensor could be used to determine penicillin G for more than 12 days without any deterioration.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
Journalanalytical sciences
Volume4
Issue number3
DOIs
Publication statusPublished - 1988 Jan 1

Keywords

  • Langmuir-Blodgett membrane
  • ion-sensitive field effect transistor
  • penicillin sensor
  • penicillinase

ASJC Scopus subject areas

  • Analytical Chemistry

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