Penetration of electronic states from silicon substrate into silicon oxide

K. Takahashi, M. B. Seman, K. Hirose, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The depth profiling of O 1s energy loss in silicon oxide near the SiO2/Si interface was performed using extremely small probing depth. As a result, the energy loss of O 1s photoelectrons with threshold energy of 3.5eV was found. This value of 3.5eV is much smaller than the SiO2 bandgap of 9.0eV, but quite close to direct interband transition at Γ point in energy band structure of silicon. This can be explained by considering the penetration of electronic states from silicon substrate into silicon oxide up to 0.6nm from the interface. In addition, the penetrating depth is larger than the thickness of the compositional transition layer.

    Original languageEnglish
    Pages (from-to)56-59
    Number of pages4
    JournalApplied Surface Science
    Volume190
    Issue number1-4
    DOIs
    Publication statusPublished - 2002 May 8

    Keywords

    • Energy loss spectroscopy
    • O 1s photoelectron
    • Silicon oxide
    • SiO/Si interface
    • Transition layer
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

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