Peculiar structure of X-ray standing wave lines of Si:As

Kouichi Hayashi, Yukio Takahashi, Eiichiro Matsubara, Momoko Takemura, Ichiro Mizushima, Hajime Tanida, Masashi Ishii

Research output: Contribution to journalArticlepeer-review

Abstract

X-ray standing wave (XSW) lines were measured for As-implanted Si wafers (Si:As) in order to investigate the annealing effect on local structure around As atoms. The observed XSW lines were spiral like and their patterns of an annealed and as-implanted Si:As samples were quite similar, though the EXAFS data of both samples showed different local structures. This result suggested that there existed stable mosaic crystalline phase in a certain region of Si wafer, which formed during As-implantation. The structural difference between the annealed and as-implanted Si:As samples was clarified by the XSW line measurements with highly angular resolution, resulting that the surfaces of the as-implanted Si:As sample were amorphous like and it crystallized by the annealing.

Original languageEnglish
Pages (from-to)382-385
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume199
DOIs
Publication statusPublished - 2003 Jan

Keywords

  • Impurity
  • Local structure
  • X-ray standing wave

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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