Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers

Kotaro Mizunuma, Michihiko Yamanouchi, Shoji Ikeda, Hideo Sato, Hiroyuki Yamamoto, Hua Dong Gan, Katsuya Miura, Jun Hayakawa, Fumihiro Matsukura, Hideo Ohno

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44 Citations (Scopus)

Abstract

The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-T a annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.

Original languageEnglish
Article number023002
JournalApplied Physics Express
Volume4
Issue number2
DOIs
Publication statusPublished - 2011 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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