PBTI for N-type tunnel FinFETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, T. Matsukawa, Y. Ishikawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Morita, S. Migita, H. Ota, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that by applying a positive bias to the n+-drain, the PBTI lifetime is dramatically improved as compared with that in the conventional stress test. This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, to accurately predict the PBTI lifetime of n-type TFETs, it is necessary to apply a drain bias for the reliability test.

Original languageEnglish
Title of host publication2015 International Conference on IC Design and Technology, ICICDT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479976690
DOIs
Publication statusPublished - 2015 Jul 23
Externally publishedYes
EventInternational Conference on IC Design and Technology, ICICDT 2015 - Leuven, Belgium
Duration: 2015 Jun 12015 Jun 3

Publication series

Name2015 International Conference on IC Design and Technology, ICICDT 2015

Other

OtherInternational Conference on IC Design and Technology, ICICDT 2015
Country/TerritoryBelgium
CityLeuven
Period15/6/115/6/3

Keywords

  • PBTI
  • activation energy
  • lifetime prediction
  • n-Type tunnel FinFETs
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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