Pb-free high temperature solders for power device packaging

Y. Yamada, Y. Takaku, Y. Yagi, Y. Nishibe, Ikuo Ohnuma, Y. Sutou, R. Kainuma, K. Ishida

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Reliabilities of joints for power semiconductor devices using a Bi-based high temperature solder has been studied. The Bi-based solder whose melting point is 270 °C were prepared by mixing of the CuAlMn particles and molten Bi to overcome the brittleness of Bi. Then, joined samples using the solder were fabricated and thermal cycling tests were examined. After almost 2000 test cycles of -40/200 °C test, neither intermetallic compounds nor cracks were observed for CTE (Coefficient of Thermal Expansion) matched sample with Cu interface. On the other hand, certain amount of intermetallic compound such as Bi3Ni was found for a sample with Ni interface. In addition, higher reliability of this solder than Sn-Cu solder was obtained after -40/250 °C test. Furthermore, an example power module structure using double high temperature solder layers was proposed.

Original languageEnglish
Pages (from-to)1932-1937
Number of pages6
JournalMicroelectronics Reliability
Volume46
Issue number9-11
DOIs
Publication statusPublished - 2006 Sep 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Pb-free high temperature solders for power device packaging'. Together they form a unique fingerprint.

  • Cite this

    Yamada, Y., Takaku, Y., Yagi, Y., Nishibe, Y., Ohnuma, I., Sutou, Y., Kainuma, R., & Ishida, K. (2006). Pb-free high temperature solders for power device packaging. Microelectronics Reliability, 46(9-11), 1932-1937. https://doi.org/10.1016/j.microrel.2006.07.083