Pb-free high temperature solders for power device packaging

Y. Yamada; Y. Takaku; Y. Yagi; Y. Nishibe; Ikuo Ohnuma; Y. Sutou; R. Kainuma; K. Ishida

doi:10.1016/j.microrel.2006.07.083

Pb-free high temperature solders for power device packaging

Y. Yamada, Y. Takaku, Y. Yagi, Y. Nishibe, Ikuo Ohnuma, Y. Sutou, R. Kainuma, K. Ishida

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

Reliabilities of joints for power semiconductor devices using a Bi-based high temperature solder has been studied. The Bi-based solder whose melting point is 270 °C were prepared by mixing of the CuAlMn particles and molten Bi to overcome the brittleness of Bi. Then, joined samples using the solder were fabricated and thermal cycling tests were examined. After almost 2000 test cycles of -40/200 °C test, neither intermetallic compounds nor cracks were observed for CTE (Coefficient of Thermal Expansion) matched sample with Cu interface. On the other hand, certain amount of intermetallic compound such as Bi₃Ni was found for a sample with Ni interface. In addition, higher reliability of this solder than Sn-Cu solder was obtained after -40/250 °C test. Furthermore, an example power module structure using double high temperature solder layers was proposed.

Original language	English
Pages (from-to)	1932-1937
Number of pages	6
Journal	Microelectronics Reliability
Volume	46
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2006.07.083
Publication status	Published - 2006 Sep 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.microrel.2006.07.083

Cite this

@article{4dfe9295602a4369bc3202da64225620,

title = "Pb-free high temperature solders for power device packaging",

abstract = "Reliabilities of joints for power semiconductor devices using a Bi-based high temperature solder has been studied. The Bi-based solder whose melting point is 270 °C were prepared by mixing of the CuAlMn particles and molten Bi to overcome the brittleness of Bi. Then, joined samples using the solder were fabricated and thermal cycling tests were examined. After almost 2000 test cycles of -40/200 °C test, neither intermetallic compounds nor cracks were observed for CTE (Coefficient of Thermal Expansion) matched sample with Cu interface. On the other hand, certain amount of intermetallic compound such as Bi3Ni was found for a sample with Ni interface. In addition, higher reliability of this solder than Sn-Cu solder was obtained after -40/250 °C test. Furthermore, an example power module structure using double high temperature solder layers was proposed.",

author = "Y. Yamada and Y. Takaku and Y. Yagi and Y. Nishibe and Ikuo Ohnuma and Y. Sutou and R. Kainuma and K. Ishida",

year = "2006",

month = sep,

day = "1",

doi = "10.1016/j.microrel.2006.07.083",

language = "English",

volume = "46",

pages = "1932--1937",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "9-11",

}

TY - JOUR

T1 - Pb-free high temperature solders for power device packaging

AU - Yamada, Y.

AU - Takaku, Y.

AU - Yagi, Y.

AU - Nishibe, Y.

AU - Ohnuma, Ikuo

AU - Sutou, Y.

AU - Kainuma, R.

AU - Ishida, K.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Reliabilities of joints for power semiconductor devices using a Bi-based high temperature solder has been studied. The Bi-based solder whose melting point is 270 °C were prepared by mixing of the CuAlMn particles and molten Bi to overcome the brittleness of Bi. Then, joined samples using the solder were fabricated and thermal cycling tests were examined. After almost 2000 test cycles of -40/200 °C test, neither intermetallic compounds nor cracks were observed for CTE (Coefficient of Thermal Expansion) matched sample with Cu interface. On the other hand, certain amount of intermetallic compound such as Bi3Ni was found for a sample with Ni interface. In addition, higher reliability of this solder than Sn-Cu solder was obtained after -40/250 °C test. Furthermore, an example power module structure using double high temperature solder layers was proposed.

AB - Reliabilities of joints for power semiconductor devices using a Bi-based high temperature solder has been studied. The Bi-based solder whose melting point is 270 °C were prepared by mixing of the CuAlMn particles and molten Bi to overcome the brittleness of Bi. Then, joined samples using the solder were fabricated and thermal cycling tests were examined. After almost 2000 test cycles of -40/200 °C test, neither intermetallic compounds nor cracks were observed for CTE (Coefficient of Thermal Expansion) matched sample with Cu interface. On the other hand, certain amount of intermetallic compound such as Bi3Ni was found for a sample with Ni interface. In addition, higher reliability of this solder than Sn-Cu solder was obtained after -40/250 °C test. Furthermore, an example power module structure using double high temperature solder layers was proposed.

UR - http://www.scopus.com/inward/record.url?scp=33748210766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748210766&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2006.07.083

DO - 10.1016/j.microrel.2006.07.083

M3 - Article

AN - SCOPUS:33748210766

VL - 46

SP - 1932

EP - 1937

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-11

ER -

Pb-free high temperature solders for power device packaging

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this