Paving the way to high-quality indium nitride: The effects of pressurized reactor

Takashi Matsuoka, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Ryuji Katayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)


To promote the research on the growth of high-quality InN films attractive to the application for both optical and electronic devices, the pressurized-reactor metalorganic-vapor-phase epitaxy (PR-MOVPE) system which can overcome the high equilibrium-vapor-pressure of nitrogen between solid and vapor phases is originally developed. In addition to this system, the N-polar growth technique developed in the growth of GaN is introduced. As a result, the dense InN films with atomic steps are successfully grown. From the struggle of the research on high quality InN, the subject of the phase purity is also arisen. The pole figure measurements make the growth condition for a pure InN with a wurtzite structure. The phase purity is almost determined by the growth temperature. These results will pave the way to high-quality InN.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
Publication statusPublished - 2011 May 13
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: 2011 Jan 232011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices VIII
Country/TerritoryUnited States
CitySan Francisco, CA


  • GaN
  • Growth mechanism
  • InN
  • Nitride
  • Polarity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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