TY - JOUR
T1 - Paving the Way for Tunable Graphene Plasmonic THz Amplifiers
AU - Boubanga Tombet, Stephane Albon
AU - Satou, Akira
AU - Yadav, Deepika
AU - But, Dmitro B.
AU - Knap, Wojciech
AU - Popov, Vyacheslav V.
AU - Gorbenko, Ilya V.
AU - Kachorovskii, Valentin
AU - Otsuji, Taiichi
N1 - Funding Information:
The work was supported by JSPS KAKENHI (No. 20K20349 and No. 21H04546), Japan; the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund for CENTERA (No. MAB/2018/9); and the Foundation for Polish Science through the TEAM Project No. POIR.04.04.00-00-3D76/ 16 (TEAM/2016-3/25). The work of IG and VK was supported by Russian Foundation of Basic Research (Grant No. 20-52-12019). The work of VP was carried out within the framework of the state task.
Publisher Copyright:
© Copyright © 2021 Boubanga-Tombet, Satou, Yadav, But, Knap, Popov, Gorbenko, Kachorovskii and Otsuji.
PY - 2021/10/4
Y1 - 2021/10/4
N2 - This study reviews recent advances in room-temperature coherent amplification of terahertz (THz) radiation in graphene, electrically driven by a dry cell battery. Our study explores THz light–plasmon coupling, light absorption, and amplification using a current-driven graphene-based system because of its excellent room temperature electrical and optical properties. An efficient method to exploit graphene Dirac plasmons (GDPs) for light generation and amplification is introduced. This approach is based on current-driven excitation of the GDPs in a dual-grating-gate high-mobility graphene channel field-effect transistor (DGG-GFET) structure. The temporal response of the DGG-GFETs to the polarization-managed incident THz pulsation is experimentally observed by using THz time-domain spectroscopy. Their Fourier spectra of the transmitted temporal waveform through the GDPs reveals the device functions 1) resonant absorption at low drain bias voltages below the first threshold level, 2) perfect transparency between the first and the second threshold drain bias levels, and 3) resonant amplification beyond the second threshold drain bias voltage. The maximal gain of 9% is obtained by a monolayer graphene at room temperatures, which is four times higher than the quantum limit that is given when THz photons directly interact with electrons. The results pave the way toward tunable graphene plasmonic THz amplifiers.
AB - This study reviews recent advances in room-temperature coherent amplification of terahertz (THz) radiation in graphene, electrically driven by a dry cell battery. Our study explores THz light–plasmon coupling, light absorption, and amplification using a current-driven graphene-based system because of its excellent room temperature electrical and optical properties. An efficient method to exploit graphene Dirac plasmons (GDPs) for light generation and amplification is introduced. This approach is based on current-driven excitation of the GDPs in a dual-grating-gate high-mobility graphene channel field-effect transistor (DGG-GFET) structure. The temporal response of the DGG-GFETs to the polarization-managed incident THz pulsation is experimentally observed by using THz time-domain spectroscopy. Their Fourier spectra of the transmitted temporal waveform through the GDPs reveals the device functions 1) resonant absorption at low drain bias voltages below the first threshold level, 2) perfect transparency between the first and the second threshold drain bias levels, and 3) resonant amplification beyond the second threshold drain bias voltage. The maximal gain of 9% is obtained by a monolayer graphene at room temperatures, which is four times higher than the quantum limit that is given when THz photons directly interact with electrons. The results pave the way toward tunable graphene plasmonic THz amplifiers.
KW - Dirac plasmons
KW - amplifier
KW - graphene
KW - instabilities
KW - terahertz
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U2 - 10.3389/fphy.2021.726806
DO - 10.3389/fphy.2021.726806
M3 - Review article
AN - SCOPUS:85117178735
VL - 9
JO - Frontiers in Physics
JF - Frontiers in Physics
SN - 2296-424X
M1 - 726806
ER -