Patterning solution-processed organic single-crystal transistors with high device performance

We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (_FET) of up to 3.5 cm²V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of _FET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher _FET with smaller variation can be expected when lower and more uniform contact resistance is achieved.