Patterning high aspect silicon pillars on cantilever by metal assisted chemical etching for humidity sensing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Pillars formed by metal assisted chemical etching (MACE) process as a post process on a silicon cantilever are presented in this work. Although the cantilever is very fragile, the patterning of the pillar structures on the cantilever have been successfully demonstrated. The high aspect silicon pillar structures from 20 to 40 with smooth surfaces and vertically etched shapes on the cantilever are formed by MACE. In addition, silicon cantilever with high aspect ratio pillars on its surface is proposed for humidity sensing application. The humidity sensing utilize the principle that the pillars stack together based upon the condensation behavior of water vapor on their surfaces.

Original languageEnglish
Title of host publication2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1232-1235
Number of pages4
ISBN (Electronic)9781509050789
DOIs
Publication statusPublished - 2017 Feb 23
Event30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 2017 Jan 222017 Jan 26

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume0
ISSN (Print)1084-6999

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
Country/TerritoryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Patterning high aspect silicon pillars on cantilever by metal assisted chemical etching for humidity sensing'. Together they form a unique fingerprint.

Cite this