Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Yongjin Wang, Fangren Hu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.

Original languageEnglish
Article number117
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
Publication statusPublished - 2011 Jan

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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