TY - JOUR
T1 - Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
AU - Wang, Yongjin
AU - Hu, Fangren
AU - Hane, Kazuhiro
N1 - Funding Information:
This work was supported by the Research Project, Grant-In-Aid for Scientific Research (19106007). Yongjin Wang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) for financial support.
PY - 2011/1
Y1 - 2011/1
N2 - We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.
AB - We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.
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U2 - 10.1186/1556-276X-6-117
DO - 10.1186/1556-276X-6-117
M3 - Article
C2 - 21711618
AN - SCOPUS:84255204752
VL - 6
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
IS - 1
M1 - 117
ER -