Pattern formation mechanism of a periodically faceted interface during crystallization ofSi

M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami, K. Nakajima

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We investigated the pattern formation mechanism of a periodically faceted crystalmelt interface during the crystallization of Si by in situ observation. It was directly proved that spacing between the reentrants of adjacent zigzag facets increases with the unification of adjacent facets when a facet with a higher growth velocity catches up with the one with a lower growth velocity. The spacing becomes stable after unification, and the stable spacing was found to increase with increase in growth velocity. The experimental results was discussed by taking the negative temperature gradient in front of the growth interface into account.

Original languageEnglish
Pages (from-to)3670-3674
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number24
DOIs
Publication statusPublished - 2010 Dec 1

Keywords

  • A1. Interfaces
  • A2. Growth from melt
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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