TY - JOUR
T1 - Pattern fabrication of chemically amplified resist on an interdigitated array electrode
AU - Nakamura, Jiro
AU - Ban, Hiroshi
AU - Morita, Masao
AU - Tanaka, Akinobu
PY - 1993/6
Y1 - 1993/6
N2 - The patterning of the chemically amplified resist SAL601 on an interdigitated array electrode (IDA) has been carried out. When direct current is applied to resist films during the post-exposure baking process, the resist sensitivity is low near the edge of the cathode on the IDA and there is a semicircular cavity in a cross-sectional-developed pattern. It is considered that catalytic protons generated during exposure reduce, becoming electrically neutral on the cathode surface and losing their catalytic ability for crosslinking reactions. From the size of the cavity, the acid diffusion coefficient can be roughly estimated to be 70 nm2/s.
AB - The patterning of the chemically amplified resist SAL601 on an interdigitated array electrode (IDA) has been carried out. When direct current is applied to resist films during the post-exposure baking process, the resist sensitivity is low near the edge of the cathode on the IDA and there is a semicircular cavity in a cross-sectional-developed pattern. It is considered that catalytic protons generated during exposure reduce, becoming electrically neutral on the cathode surface and losing their catalytic ability for crosslinking reactions. From the size of the cavity, the acid diffusion coefficient can be roughly estimated to be 70 nm2/s.
KW - Chemically amplified resist
KW - Crosslinking
KW - Diffusion
KW - Interdigitated array electrode
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U2 - 10.1143/JJAP.32.L813
DO - 10.1143/JJAP.32.L813
M3 - Article
AN - SCOPUS:0027611833
VL - 32
SP - L813-L815
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 A
ER -