Parylene-gate isfet and chemical modification of its surface with crown ether compounds

T. Matsuo, H. Nakajima, T. Osa, J. Anzai

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

A hydrophobic polymer such as parylene has ion dissociation sites of extremely low density. An electrolyte-parylene interface manifests a constant potential independent of solution composition. The parylene-gate ISFET can be used as a solid state reference electrode. These films can also be used for the substrate of a CHEMFET, where the recent chemical modification technology is introduced. In this paper, the concept of a parylene-gate ISFET based on the site-binding model is investigated. As applications, a probe-type all solid state pH sensor integrating an Si3N4 gate, a parylene gate and an Au pseudo-reference electrode is discussed. A pK ISFET chemically modified with crown ether compounds is also reported.

Original languageEnglish
Pages (from-to)115-123
Number of pages9
JournalSensors and Actuators
Volume9
Issue number2
DOIs
Publication statusPublished - 1986 Apr

ASJC Scopus subject areas

  • Engineering(all)

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