Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 1- 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 1- 0 2-] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

Original languageEnglish
Article number051902
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
Publication statusPublished - 2011 Jan 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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