Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN

Z. H. Wu; T. Tanikawa; T. Murase; Y. Y. Fang; C. Q. Chen; Y. Honda; M. Yamaguchi; H. Amano; N. Sawaki

doi:10.1063/1.3549561

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN

Z. H. Wu, T. Tanikawa, T. Murase, Y. Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 1- 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 1- 0 2-] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

Original language	English
Article number	051902
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3549561
Publication status	Published - 2011 Jan 31
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN",

abstract = "We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 1- 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 1- 0 2-] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.",

author = "Wu, {Z. H.} and T. Tanikawa and T. Murase and Fang, {Y. Y.} and Chen, {C. Q.} and Y. Honda and M. Yamaguchi and H. Amano and N. Sawaki",

note = "Funding Information: Research at Huazhong University of Science and Technology was supported by the National Natural Science Foundation of China (Grant Nos. 60976042 and 60906023), and the National Basic Research Program of China (973 Program: Grant No. 2010CB923204). We are also indebted to the second-stage Knowledge Cluster Initiative, Tokai Region Nanotechnology Manufacturing Cluster in Japan. The use of the facilities of the Venture Business Laboratory of Nagoya University is acknowledged.",

year = "2011",

month = jan,

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doi = "10.1063/1.3549561",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

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AU - Wu, Z. H.

AU - Tanikawa, T.

AU - Murase, T.

AU - Fang, Y. Y.

AU - Chen, C. Q.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Amano, H.

AU - Sawaki, N.

N1 - Funding Information: Research at Huazhong University of Science and Technology was supported by the National Natural Science Foundation of China (Grant Nos. 60976042 and 60906023), and the National Basic Research Program of China (973 Program: Grant No. 2010CB923204). We are also indebted to the second-stage Knowledge Cluster Initiative, Tokai Region Nanotechnology Manufacturing Cluster in Japan. The use of the facilities of the Venture Business Laboratory of Nagoya University is acknowledged.

PY - 2011/1/31

Y1 - 2011/1/31

N2 - We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 1- 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 1- 0 2-] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

AB - We have investigated the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1 1- 01) semipolar GaN templates grown on patterned (001) silicon substrates by selective area growth technique. Our studies by transmission electron microscopy and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1 1- 0 2-] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN

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