The impact ionization phenomenon in submicron lightly doped drain (LDD) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is investigated using devices with body terminals. It is shown that an accurate model for the impact ionization current in submicron LDD SOI MOSFETs has to account for the voltage drop on the parasitic source-and-drain series resistances and the gate-voltage-dependent saturation field in the expression for the maximum channel electric field Em. It is demonstrated that the plot of IIMP/(IDEm) versus 1/Em is a single straight line for a given technology. In addition, a new numerical extraction method is proposed to determine the voltage-dependent drain-and-source parasitic series resistances and effective channel length of LDD SOI MOSFETs. The method is based on measuring output resistances of transistors with varying channel length.
|Number of pages||11|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering