Parasitic effects and long term stability of InP-based HEMTs

G. Meneghesso; R. Luise; D. Buttari; A. Chini; H. Yokoyama; T. Suemitsu; E. Zanoni

doi:10.1016/S0026-2714(00)00168-2

Parasitic effects and long term stability of InP-based HEMTs

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, g_m(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, g_m(f) dispersion).

Original language	English
Pages (from-to)	1715-1720
Number of pages	6
Journal	Microelectronics Reliability
Volume	40
Issue number	8-10
DOIs	https://doi.org/10.1016/S0026-2714(00)00168-2
Publication status	Published - 2000 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Parasitic effects and long term stability of InP-based HEMTs",

abstract = "A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).",

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T1 - Parasitic effects and long term stability of InP-based HEMTs

AU - Meneghesso, G.

AU - Luise, R.

AU - Buttari, D.

AU - Chini, A.

AU - Yokoyama, H.

AU - Suemitsu, T.

AU - Zanoni, E.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).

AB - A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).

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