P3HT/Al organic/inorganic heterojunction diodes investigated by I-V and C-V measurements

Fumihiko Hirose, Yasuo Kimura, Michio Niwano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electrical characteristics of P3HT/Aluminum organic/inorganic heterojunction diodes were investigated V-I and capacitancevoltage (C-V) measurements. The V-I measurement exhibited current rectification inherent in the Schottky diode, suggesting their availabilities as rectification diodes in organic flexible circuits. C-V analysis indicated the fact that the depletion layer was generated in the P3HT film in the reversed bias condition. The flat band voltage analysis suggested that the interfacial charge affected the built-in potential of the diodes. Al/P3HT heterojunction is possible to be used as not only the rectification diodes but also gate junctions for junction type field effect or static induction transistors.

Original languageEnglish
Pages (from-to)1475-1478
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE92-C
Issue number12
DOIs
Publication statusPublished - 2009 Jan 1

Keywords

  • Flexible electronics
  • Heterojunction
  • Poly(3-hexylthiophene)
  • Schottky diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'P3HT/Al organic/inorganic heterojunction diodes investigated by I-V and C-V measurements'. Together they form a unique fingerprint.

Cite this