Electric double-layer transistors have recently attracted a growing interest because of their low operating voltage and capacity for accumulation of high carrier density. Here, we demonstrate an electric double-layer transistor with a NiO single-crystal Mott insulator that displays a p -type behavior with a field-effect mobility and on/off ratio of 1.6× 10-4 cm 2 V s and 130, respectively. Despite relatively poor device performance, the present results demonstrate that the electric double-layer transistor is not limited to normal band insulators but is achievable using Mott insulators, in which electrostatic doping is of significant interest.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)