P-Type diluted magnetic III-V semiconductors

H. Munekata, H. Ohno, R. R. Ruf, R. J. Gambino, L. L. Chang

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)

Abstract

Diluted magnetic III-V semiconductors In1-xMnxAs with p-type conduction have been successfully grown by molecular beam epitaxy under the specific growth conditions of substrate temperatures above 275°C with Mn compositions 0.001 {less-than or approximate} × {less-than or approximate} 0.03. No MnAs second phase was detected in these films in which the Mn ions serve the dual purpose of providing conduction holes and local spins. Hole concentrations fall in the range of 5 × 1017 to 1020 cm-3 depending on the Mn composition, and they can be varied with donor impurities such as Sn. Magnetotransport at low temperatures exhibits striking hysteretic characteristics, suggesting the occurrence of ferrogmagnetic order induced by the presence of holes.

Original languageEnglish
Pages (from-to)1011-1015
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'P-Type diluted magnetic III-V semiconductors'. Together they form a unique fingerprint.

Cite this