TY - JOUR
T1 - P-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing
AU - Park, Seung Hwan
AU - Minegishi, Tsutomu
AU - Oh, Dong Cheol
AU - Chang, Ji Ho
AU - Yao, Takafumi
AU - Taishi, Toshinori
AU - Yonenaga, Ichiro
N1 - Funding Information:
This research was supported by the Academic Research Fund of Hoseo University in 2012 (2012-0386).
PY - 2013
Y1 - 2013
N2 - The authors report on the p-type conductivity in the ZnO films, grown on c-Al2O3 substrates by molecular-beam epitaxy, using N and Te codoping and thermal annealing. In the electrical properties, the N and Te codoping effectively suppresses the background electron concentration of ZnO films, and the thermal annealing causes the conductivity conversion from n-type to p-type. In the structural properties, the N and Te codoping deteriorates the crystalline quality of ZnO films, even if Te doping contributes to improve the crystallinity, and the thermal annealing recovers the degraded crystalline quality again. In the optical properties, the N and Te codoping simultaneously increases the donor-related emission, the acceptor-related emission, and the nonradiative recombination in ZnO films, while the thermal annealing relatively enhances the acceptor-related emission. It is proposed that (i) the N and Te codoping simultaneously induces N-related defects and donor-type defects along with free acceptors in the ZnO films, but the amount the N-related defects is larger than the donor-type defects and the free acceptors; and (ii) the thermal annealing relatively activates the N-related defects and suppresses the donor-type defects.
AB - The authors report on the p-type conductivity in the ZnO films, grown on c-Al2O3 substrates by molecular-beam epitaxy, using N and Te codoping and thermal annealing. In the electrical properties, the N and Te codoping effectively suppresses the background electron concentration of ZnO films, and the thermal annealing causes the conductivity conversion from n-type to p-type. In the structural properties, the N and Te codoping deteriorates the crystalline quality of ZnO films, even if Te doping contributes to improve the crystallinity, and the thermal annealing recovers the degraded crystalline quality again. In the optical properties, the N and Te codoping simultaneously increases the donor-related emission, the acceptor-related emission, and the nonradiative recombination in ZnO films, while the thermal annealing relatively enhances the acceptor-related emission. It is proposed that (i) the N and Te codoping simultaneously induces N-related defects and donor-type defects along with free acceptors in the ZnO films, but the amount the N-related defects is larger than the donor-type defects and the free acceptors; and (ii) the thermal annealing relatively activates the N-related defects and suppresses the donor-type defects.
KW - A1. Doping
KW - A3. Molecular-beam epitaxy
KW - B2. Semiconducting II-VI materials
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U2 - 10.1016/j.jcrysgro.2012.10.042
DO - 10.1016/j.jcrysgro.2012.10.042
M3 - Article
AN - SCOPUS:84888373248
VL - 363
SP - 190
EP - 194
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -