P-33: Cu-Mn electrodes for a-Si TFT and its electrical characteristics

Junichi Koike, Kazuhiko Hirota, Mayumi Naito, Pilsang Yun, Yuji Sutou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Cu-Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 106.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1343-1346
Number of pages4
Publication statusPublished - 2010 Dec 1
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Country/TerritoryUnited States
CitySeattle, WA
Period10/5/2310/5/28

ASJC Scopus subject areas

  • Hardware and Architecture
  • Information Systems

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