P-23: The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes

Pil Sang Yun, Mayumi Naito, Ryo Kumagai, Yuji Sutou, Junichi Koike

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.

Original languageEnglish
Pages (from-to)1177-1180
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

ASJC Scopus subject areas

  • Engineering(all)

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