Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2011 Jun 1|
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