Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -A theoretical approach

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado

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152 Citations (Scopus)

Abstract

A theoretical investigation has been made of the origin of substantial threshold voltage (Vth) shifts observed in p+poly-Si gate Hf-based metal insulator semiconductor field effect transistors (MISFETs), by focusing on the effect of oxygen vacancy (VO) formation in HfO2. It has been found that VO formation and subsequent electron transfer across the interface definitely causes substantial Vth, shifts, especially in p+poly-Si gate MISFETs. Moreover, the theory also systematically reproduces recent experimental reports that large fiat band (Vfb) shifts are observed, even in intrinsic poly-Si gates, and that the V fb shifts exhibit a high dependence on HfSiOx thickness.

Original languageEnglish
Pages (from-to)L1413-L1415
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number11 A
DOIs
Publication statusPublished - 2004 Nov 1
Externally publishedYes

Keywords

  • Fermi level pinning, theory
  • Flatband shift
  • HfO
  • High-k dielectrics
  • Oxygen vacancy
  • Poly-Si-gate electrode
  • Threshold voltage shift

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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