Oxygen-plasma induced hydrogen desorption from hydrogen-terminated Si(100) and (111) surfaces investigated by infrared spectroscopy

Masanori Shinohara, Teruaki Katagiri, Keitaro Iwatsuji, Yoshinobu Matsuda, Hiroshi Fujiyama, Yasuo Kimura, Michio Niwano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Oxygen-plasma induced hydrogen desorption from hydrogen (H)-terminated Si(100) and (111) surfaces is investigated using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. When a hydrofluoric (HF)-treated Si(100) surface is exposed to oxygen-plasma without sample heating, silicon hydride species rapidly decrease in density and SiH 2 species are removed rapidly as compared with SiH species. On the other hand, when a NH4F-treated Si(111) surface is exposed to oxygen-plasma without sample heating, all the hydride species rapidly perish. SiH species resides on the terrace of the H-terminated Si(111) surface, while SiH2 species resides on the terrace of the H-terminated Si(100) surface. Oxygen-plasma induced hydrogen desorption from H-terminated Si surfaces does not depend on the type of hydride species, but on their positions; that is, hydrogen of hydride species at upper sites is desorbed at high rates by oxygen-plasma exposure.

Original languageEnglish
Pages (from-to)14-17
Number of pages4
JournalThin Solid Films
Volume464-465
DOIs
Publication statusPublished - 2004 Oct
Externally publishedYes

Keywords

  • Hydride species
  • Hydrogen desorption
  • Infrared absorption
  • Oxygen-plasma
  • Si surface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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