Oxygen pipe diffusion in sapphire basal dislocation

Tsubasa Nakagawa, Atsutomo Nakamura, Isao Sakaguchi, Naoya Shibata, K. Peter D. Lagerlöf, Takahisa Yamamoto, Hajime Haneda, Yuichi Ikuhara

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

The oxygen self-diffusion behavior in deformed sapphire single crystals (α-Al2O3) sapphire) with a high density of unidirectional basal dislocations was examined in the temperature range of 1424-1636°C using 18O isotopes and secondary ion mass spectrometry-depth profiling techniques. The pipe and lattice diffusion kinetics were best described by r2Dp = 4.6 × 10 -20 exp (-4.8[eV]/kT) [m4/s] and D1 = 2.9× 10-1 exp (-5.5[eV]/kT) [m2/s], respectively. Both the magnitude of pre-exponential factor and activation energy for oxygen pipe diffusion were in good agreement with that of indirect measurements of pipe diffusion deduced from the annihilation of dislocation dipoles. The measured bulk diffusion coefficient is also in good agreement with previously reported data having activation energies ranged between 5.5-6.1 eV.

Original languageEnglish
Pages (from-to)1013-1017
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume114
Issue number1335
DOIs
Publication statusPublished - 2006 Nov
Externally publishedYes

Keywords

  • Dislocation
  • Grain boundary diffusion
  • Pipe diffusion
  • SIMS
  • Sapphire

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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