Oxygen migration at Pt/ HfO2 /Pt interface under bias operation

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)


The interfacial electronic states of a Pt/ HfO2 /Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/ HfO2 /Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/ HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/ HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.

Original languageEnglish
Article number082902
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2010 Aug 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Oxygen migration at Pt/ HfO2 /Pt interface under bias operation'. Together they form a unique fingerprint.

Cite this