Oxygen migration at Pt/ HfO2 /Pt interface under bias operation

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

The interfacial electronic states of a Pt/ HfO2 /Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/ HfO2 /Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/ HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/ HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.

Original languageEnglish
Article number082902
JournalApplied Physics Letters
Volume97
Issue number8
DOIs
Publication statusPublished - 2010 Aug 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Oxygen migration at Pt/ HfO<sub>2</sub> /Pt interface under bias operation'. Together they form a unique fingerprint.

Cite this