Oxygen-induced reduction of the graphitization temperature of SiC surface

Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu

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5 Citations (Scopus)


In the solid-vapor phase equilibria between SiC and O2 system, there exists a region where the reaction 2〈× SiC 〈 O2 ← (2 〈 ×)Si" ↑〈 2CO↑ 〈" ×C↓ takes place [Y. W. Song and F. W. Smith: J. Am. Ceram. Soc. 88 (2005) 1864]. By tuning the temperature and the oxygen pressure used in the graphitization annealing into this region, we have succeeded in the growth of epitaxial graphene on SiC crystals at 1000 °C, which is lower, by 250 °C or more, than the conventional epitaxial graphene method. The method is especially useful to formation of epitaxial graphene on silicon (GOS), which requires a lower graphitization temperature because of the Si substrate as well as of its mission to attain compatibility with Si technology.

Original languageEnglish
Article number070105
JournalJapanese journal of applied physics
Issue number7 PART 1
Publication statusPublished - 2011 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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