Oxygen effect on the microstructure and magnetic properties of binary copt thin films for perpendicular recording

Takashi Hikosaka; Tomoko Komai; Yoichiro Tanaka

doi:10.1109/20.333978

Oxygen effect on the microstructure and magnetic properties of binary copt thin films for perpendicular recording

Takashi Hikosaka, Tomoko Komai, Yoichiro Tanaka

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

This paper presents the effect of oxygen on the microstructure of Co - 18 at. % Pt perpendicular medium. Oxygen addition to the CoPt films during high Ar pressure (4 Pa) sputtering successfully increased the perpendicular coercivity. 188 kA/m coercivity and 1.2 tesla (T) saturation magnetization were obtained. The perpendicular anisotropy energy was at least 570 kJ/m3. AEM and EDX measurements revealed that the film was composed of crystal grains and amorphous boundaries and that oxygen segregated clearly inside the amorphous boundaries. A TEM image showed a 10 nm grain diameter independent of the oxygen partial pressure. For CoPt films deposited under a lower Ar pressure (2 Pa), oxygen has been found to exist uniformly within the grains and boundaries and showed no significant effect on coercivity.

Original language	English
Pages (from-to)	4026-4028
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/20.333978
Publication status	Published - 1994 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Hikosaka, T., Komai, T., & Tanaka, Y. (1994). Oxygen effect on the microstructure and magnetic properties of binary copt thin films for perpendicular recording. IEEE Transactions on Magnetics, 30(6), 4026-4028. https://doi.org/10.1109/20.333978

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abstract = "This paper presents the effect of oxygen on the microstructure of Co - 18 at. % Pt perpendicular medium. Oxygen addition to the CoPt films during high Ar pressure (4 Pa) sputtering successfully increased the perpendicular coercivity. 188 kA/m coercivity and 1.2 tesla (T) saturation magnetization were obtained. The perpendicular anisotropy energy was at least 570 kJ/m3. AEM and EDX measurements revealed that the film was composed of crystal grains and amorphous boundaries and that oxygen segregated clearly inside the amorphous boundaries. A TEM image showed a 10 nm grain diameter independent of the oxygen partial pressure. For CoPt films deposited under a lower Ar pressure (2 Pa), oxygen has been found to exist uniformly within the grains and boundaries and showed no significant effect on coercivity.",

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AB - This paper presents the effect of oxygen on the microstructure of Co - 18 at. % Pt perpendicular medium. Oxygen addition to the CoPt films during high Ar pressure (4 Pa) sputtering successfully increased the perpendicular coercivity. 188 kA/m coercivity and 1.2 tesla (T) saturation magnetization were obtained. The perpendicular anisotropy energy was at least 570 kJ/m3. AEM and EDX measurements revealed that the film was composed of crystal grains and amorphous boundaries and that oxygen segregated clearly inside the amorphous boundaries. A TEM image showed a 10 nm grain diameter independent of the oxygen partial pressure. For CoPt films deposited under a lower Ar pressure (2 Pa), oxygen has been found to exist uniformly within the grains and boundaries and showed no significant effect on coercivity.

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