Oxygen-doped GeSbTe phase-change memory cells featuring 1.5-V/100-μA standard 0.13-μm CMOS operations

N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Terao, M. Matsuoka, Masahiro Moniwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    23 Citations (Scopus)

    Abstract

    We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-μA programming through a tungsten-bottom-electrode contact with a diameter of 180 nm. This is the lowest power ever reported. This was achieved with oxygen-doped GeSbTe, and resulted from the high electric resistance of the germanium oxides in this material. Germanium oxides were also estimated to restrain the growth of crystal in GeSbTe, and our cells maintained a 10-year thermal lifetime at 100°C.

    Original languageEnglish
    Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
    Pages737-741
    Number of pages5
    Publication statusPublished - 2005 Dec 1
    EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
    Duration: 2005 Dec 52005 Dec 7

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    Volume2005
    ISSN (Print)0163-1918

    Other

    OtherIEEE International Electron Devices Meeting, 2005 IEDM
    CountryUnited States
    CityWashington, DC, MD
    Period05/12/505/12/7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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