Oxygen donors developed around dislocations in silicon

Masamitsu Koguchi, Ichiro Yonenag, Koji Sumino

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.

Original languageEnglish
Pages (from-to)L411-L413
JournalJapanese journal of applied physics
Volume21
Issue number7
DOIs
Publication statusPublished - 1982 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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