Oxygen donors developed around dislocations in silicon

Masamitsu Koguchi, Ichiro Yonenag, Koji Sumino

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.

Original languageEnglish
Pages (from-to)L411-L413
JournalJapanese journal of applied physics
Issue number7
Publication statusPublished - 1982 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Oxygen donors developed around dislocations in silicon'. Together they form a unique fingerprint.

Cite this