Oxygen donors developed around dislocations in silicon

Masamitsu Koguchi; Ichiro Yonenag; Koji Sumino

doi:10.1143/JJAP.21.L411

Oxygen donors developed around dislocations in silicon

Masamitsu Koguchi, Ichiro Yonenag, Koji Sumino

Materials Design Division

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.

Original language	English
Pages (from-to)	L411-L413
Journal	Japanese journal of applied physics
Volume	21
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.21.L411
Publication status	Published - 1982 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Koguchi, M., Yonenag, I., & Sumino, K. (1982). Oxygen donors developed around dislocations in silicon. Japanese journal of applied physics, 21(7), L411-L413. https://doi.org/10.1143/JJAP.21.L411

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