TY - JOUR
T1 - Oxygen donors developed around dislocations in silicon
AU - Koguchi, Masamitsu
AU - Yonenag, Ichiro
AU - Sumino, Koji
PY - 1982/7
Y1 - 1982/7
N2 - Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.
AB - Plastic deformation of Czochralski silicon crystals at elevated temperature produces both acceptors and donors simultaneously. The former are ascribed to dislocations and the latter to the oxygen atmospheres around dislocations. The energy levels of the deformation-induced donors are determined by Hall measurements. The oxygen atmospheres are found to be very stable and not to easily transform to precipitates of cristobalite by annealing at 900 °C.
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U2 - 10.1143/JJAP.21.L411
DO - 10.1143/JJAP.21.L411
M3 - Article
AN - SCOPUS:0020151246
VL - 21
SP - L411-L413
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -