Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method

T. Taishi, T. Hayashi, N. Bamba, Yutaka Ohno, Ichiro Yonenaga, K. Hoshikawa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Defects related to oxygen and other impurities in piezoelectric langasite (La3Ga5SiO14; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.

Original languageEnglish
Pages (from-to)437-440
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Keywords

  • Interstitial
  • Langasite single crystal
  • Oxygen defects
  • Resistivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Oxygen defects in langasite (La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub>) single crystal grown by vertical Bridgman (VB) method'. Together they form a unique fingerprint.

  • Cite this