Abstract
To understand oxidation in three-dimensional silicon, dynamic characteristics of a SiOx system with various stoichiometries were investigated. The calculated results show that the self-diffusion coefficient increases as oxygen density decreases, and the increase is large when the temperature is low. It also shows that the self-diffusion coefficient saturates, when the number of removed oxygen atoms is sufficiently large. Then, approximate analytical equations are derived from the calculated results, and the previously reported expression is confirmed in the extremely low-SiO-density range.
| Original language | English |
|---|---|
| Article number | 06KD01 |
| Journal | Japanese journal of applied physics |
| Volume | 57 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2018 Jun |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Yajima, Y., Shiraishi, K., Endoh, T., & Kageshima, H. (2018). Oxygen concentration dependence of silicon oxide dynamical properties. Japanese journal of applied physics, 57(6), [06KD01]. https://doi.org/10.7567/JJAP.57.06KD01