TY - JOUR
T1 - Oxygen concentration dependence of silicon oxide dynamical properties
AU - Yajima, Yuji
AU - Shiraishi, Kenji
AU - Endoh, Tetsuo
AU - Kageshima, Hiroyuki
N1 - Funding Information:
This work has been supported by a grant from “Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFET and Its Advanced Application Exploration” (Research Director, Professor Tetsuo Endoh; Program Manager, Dr. Toru Masaoka) of ACCEL under JST (JPMJAC1301). Part of the calculations of this work was performed in the Supercomputer Center of ISSP, The University of Tokyo.
PY - 2018/6
Y1 - 2018/6
N2 - To understand oxidation in three-dimensional silicon, dynamic characteristics of a SiOx system with various stoichiometries were investigated. The calculated results show that the self-diffusion coefficient increases as oxygen density decreases, and the increase is large when the temperature is low. It also shows that the self-diffusion coefficient saturates, when the number of removed oxygen atoms is sufficiently large. Then, approximate analytical equations are derived from the calculated results, and the previously reported expression is confirmed in the extremely low-SiO-density range.
AB - To understand oxidation in three-dimensional silicon, dynamic characteristics of a SiOx system with various stoichiometries were investigated. The calculated results show that the self-diffusion coefficient increases as oxygen density decreases, and the increase is large when the temperature is low. It also shows that the self-diffusion coefficient saturates, when the number of removed oxygen atoms is sufficiently large. Then, approximate analytical equations are derived from the calculated results, and the previously reported expression is confirmed in the extremely low-SiO-density range.
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U2 - 10.7567/JJAP.57.06KD01
DO - 10.7567/JJAP.57.06KD01
M3 - Article
AN - SCOPUS:85048055589
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06KD01
ER -