Oxygen concentration dependence of silicon oxide dynamical properties

Yuji Yajima, Kenji Shiraishi, Tetsuo Endoh, Hiroyuki Kageshima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To understand oxidation in three-dimensional silicon, dynamic characteristics of a SiOx system with various stoichiometries were investigated. The calculated results show that the self-diffusion coefficient increases as oxygen density decreases, and the increase is large when the temperature is low. It also shows that the self-diffusion coefficient saturates, when the number of removed oxygen atoms is sufficiently large. Then, approximate analytical equations are derived from the calculated results, and the previously reported expression is confirmed in the extremely low-SiO-density range.

Original languageEnglish
Article number06KD01
JournalJapanese journal of applied physics
Volume57
Issue number6
DOIs
Publication statusPublished - 2018 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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