Oxidizing species dependence of the interface reaction during atomic-layer-deposition process and post-deposition-anneal

T. Suwa, A. Teramoto, Y. Koda, M. Saito, H. Sugita, M. Hayashi, J. Tsuchimoto, H. Ishii, Y. Shiba, Y. Shirai, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The influence of the post deposition anneal (PDA) to the Al2O3 film quality was investigated. In the case of PDA using Ar/O2 plasma, the Al2O3/substrate interface quality was degraded because the oxidation at Al2O3/substrate interface proceeds. In the case of PDA using H2O, the gate leakage current can be decreased. However, H2O annealing induced the voltage dependence of capacitance due to increase the traps in the Al2O3 film. It is considered that the H2O annealing is effective to reduce the gate leakage current and fixed charges in the Al2O3 film but is induced to increase the traps in the film.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 14
EditorsK. Kita, S. Kar, D. Landheer, D. Misra
PublisherElectrochemical Society Inc.
Pages207-214
Number of pages8
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number5
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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