Oxide thickness dependence of nitridation effects on TDDB characteristics

M. K. Mazumder, A. Teramoto, J. Komori, Y. Mashiko

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

Using wet oxide thickness ranging from ∼ 50 to ∼ 80 Å, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter tbd up to the thickness of ∼ 60 Å but a turn-around behavior was found for ∼ 50 Å nitrided oxide. It can be suggested that a turn-around behavior of tbd of nitrided wet oxide of ∼ 50 Å comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 Å for the same nitridation conditions.

Original languageEnglish
Pages103-108
Number of pages6
Publication statusPublished - 2001 Jan 1
Externally publishedYes
EventICMTS 2001. 2001 International Conference on Microelectronic Test Structures - Kobe, Japan
Duration: 2001 Mar 192001 Mar 22

Other

OtherICMTS 2001. 2001 International Conference on Microelectronic Test Structures
CountryJapan
CityKobe
Period01/3/1901/3/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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