Abstract
Using wet oxide thickness ranging from ∼ 50 to ∼ 80 Å, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter tbd up to the thickness of ∼ 60 Å but a turn-around behavior was found for ∼ 50 Å nitrided oxide. It can be suggested that a turn-around behavior of tbd of nitrided wet oxide of ∼ 50 Å comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 Å for the same nitridation conditions.
Original language | English |
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Pages | 103-108 |
Number of pages | 6 |
Publication status | Published - 2001 Jan 1 |
Externally published | Yes |
Event | ICMTS 2001. 2001 International Conference on Microelectronic Test Structures - Kobe, Japan Duration: 2001 Mar 19 → 2001 Mar 22 |
Other
Other | ICMTS 2001. 2001 International Conference on Microelectronic Test Structures |
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Country/Territory | Japan |
City | Kobe |
Period | 01/3/19 → 01/3/22 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering