Oxide thickness dependence of nitridation effects on TDDB characteristics

M. K. Mazumder; A. Teramoto; J. Komori; Y. Mashiko

Oxide thickness dependence of nitridation effects on TDDB characteristics

M. K. Mazumder, A. Teramoto, J. Komori, Y. Mashiko

Research output: Contribution to conference › Paper › peer-review

Abstract

Using wet oxide thickness ranging from ∼ 50 to ∼ 80 Å, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter t_bd up to the thickness of ∼ 60 Å but a turn-around behavior was found for ∼ 50 Å nitrided oxide. It can be suggested that a turn-around behavior of t_bd of nitrided wet oxide of ∼ 50 Å comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 Å for the same nitridation conditions.

Original language	English
Pages	103-108
Number of pages	6
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	ICMTS 2001. 2001 International Conference on Microelectronic Test Structures - Kobe, Japan Duration: 2001 Mar 19 → 2001 Mar 22

Other

Other	ICMTS 2001. 2001 International Conference on Microelectronic Test Structures
Country/Territory	Japan
City	Kobe
Period	01/3/19 → 01/3/22

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@conference{20165d8f8ff543528ed6edf5239c5407,

title = "Oxide thickness dependence of nitridation effects on TDDB characteristics",

abstract = "Using wet oxide thickness ranging from ∼ 50 to ∼ 80 {\AA}, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter tbd up to the thickness of ∼ 60 {\AA} but a turn-around behavior was found for ∼ 50 {\AA} nitrided oxide. It can be suggested that a turn-around behavior of tbd of nitrided wet oxide of ∼ 50 {\AA} comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 {\AA} for the same nitridation conditions.",

author = "Mazumder, {M. K.} and A. Teramoto and J. Komori and Y. Mashiko",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "103--108",

note = "ICMTS 2001. 2001 International Conference on Microelectronic Test Structures ; Conference date: 19-03-2001 Through 22-03-2001",

}

TY - CONF

T1 - Oxide thickness dependence of nitridation effects on TDDB characteristics

AU - Mazumder, M. K.

AU - Teramoto, A.

AU - Komori, J.

AU - Mashiko, Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Using wet oxide thickness ranging from ∼ 50 to ∼ 80 Å, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter tbd up to the thickness of ∼ 60 Å but a turn-around behavior was found for ∼ 50 Å nitrided oxide. It can be suggested that a turn-around behavior of tbd of nitrided wet oxide of ∼ 50 Å comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 Å for the same nitridation conditions.

AB - Using wet oxide thickness ranging from ∼ 50 to ∼ 80 Å, effects of nitridation on time-dependent-dielectric breakdown (TDDB) characteristics have been investigated. Results show that the capacitors with nitrided oxide have shorter tbd up to the thickness of ∼ 60 Å but a turn-around behavior was found for ∼ 50 Å nitrided oxide. It can be suggested that a turn-around behavior of tbd of nitrided wet oxide of ∼ 50 Å comparing to the wet oxide seems to be due to the more nitrogen concentration in the interface than the thick wet oxide of above 60 Å for the same nitridation conditions.

UR - http://www.scopus.com/inward/record.url?scp=0034860526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034860526&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034860526

SP - 103

EP - 108

T2 - ICMTS 2001. 2001 International Conference on Microelectronic Test Structures

Y2 - 19 March 2001 through 22 March 2001

ER -

Oxide thickness dependence of nitridation effects on TDDB characteristics

Abstract

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ASJC Scopus subject areas

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