Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO 2/Si structure, and its elimination by a palladium overlayer

Hikaru Kobayashi, Tomohiro Kubota, Hidefumi Kawa, Yoshihiro Nakato, Masayoshi Nishiyama

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Abstract

The energy difference between the oxide and substrate Si 2p peaks for silicon oxide/Si structures increases with the oxide thickness. The dependence of the energy shift on the oxide thickness almost disappears with the deposition of a thin palladium overlayer, because of the avoidance of the surface charging effect due to photoemission and because of the nearly constant energy shift resulting from extra atomic relaxation. The true chemical shift of silicon oxide layers thicker than 2 nm is determined to be ∼3.8eV. For the thickness dependence of the oxide Si 2p energy, the extra atomic relaxation and charging effect are dominant for oxide layers thinner than ∼2nm and thicker than ∼4nm, respectively. In the intermediate thickness region, both the effects are important.

Original languageEnglish
Pages (from-to)933-935
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number7
DOIs
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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